sur20100ct sur20100ct v rsm v 1000 v rrm v 1000 symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =100 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 25 10 150 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 75 80 65 70 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 28 27 21 20 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c p tot t c =25 o c m d mounting torque 78 0.4...0.6 2 w nm weight g a=anode, c=cathode, tab=cathode a a c c(tab) a c a dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 dimensions to-220ab soft recovery behaviour ultra fast recovery epitaxial diodes p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
sur20100ct advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * low noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * antiparallel diode for high frequency switching devices * antisaturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating and melting * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package jedec to-220ab * glass passivated chips * very short recovery time * extremely low switching losses * low i rm -values * soft recovery behaviour symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 250 150 4 ua ua ma i r i f =12a; t vj =150 o c t vj =25 o c 2.1 2.7 v v f r thjc r thck r thja 1.6 60 k/w 0.5 v r =540v; i f =10a; -di f /dt=100a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=50a/us; v r =30v; t vj =25 o c ns i rm 7.2 a 50 v to for power-loss calculations only 1.67 v r t 33.6 m t vj =t vjm 60 6.5 _ soft recovery behaviour ultra fast recovery epitaxial diodes * rohs compliant p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
sur20100ct f ig. 1 f orward current f ig. 2 r ecovery charge vers us -di f /dt. f ig. 3 p eak revers e current vers us vers us voltage drop. -di f /dt. f ig. 4 dynamic parameters vers us f ig. 5 r ecovery time vers us -di f /dt. f ig. 6 p eak forward voltage junction temperature. vers us di f /dt. f ig. 7 t rans ient thermal impedance junction to cas e. soft recovery behaviour ultra fast recovery epitaxial diodes p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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